Sokrates T. Pantelides

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Physics of SiO2 and Its Interfaces: Proceedings of the International Topical Conference on the Physics of SiO2 and Its Interfaces Held at the IBM Thomas J. Waston Research Center, Yorktown Heights, New York, March 22-24 1978

by Sokrates T. Pantelides First published in 1978 — 3 editions

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Molecular Electronics: Symposium Held November 29-December 2, 1999, Boston, Massachusetts, U.S.A. (Materials Research Society Symposia Proceedings, V. 582.)

by Sokrates T. Pantelides First published in 2000 — 2 editions

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Physics of MOS Insulators: Proceedings of the International Topical Conference on the Physics of MOS Insulators Held at the Jane S. Mckimmon Conference Center, North Carolina State University, Raleigh, North Carolina, June 18-20 1980

by Gerald Lucovsky, Sokrates T. Pantelides, and Frank L. Galeener First published in 2013 — 2 editions

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Deep Centers in Semiconductors: A State-of-the-Art Approach

by Sokrates T. Pantelides First published in 1992 — 2 editions

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Computer-based microscopic description of the structure and properties of materials: symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A.

by J. Broughton, William Krakow, and Sokrates T. Pantelides First published in 1986 — 1 edition
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Deep centers in semiconductors: a state of the art approach

by Sokrates T. Pantelides First published in 1986 — 1 edition
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SiO2 and its interfaces: symposium held November 30-December 5, 1987, Boston, Massachusetts, U.S.A.

by Sokrates T. Pantelides First published in 1988 — 1 edition

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OLID: OL2641807A

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Created April 29, 2008
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Sokrates T. Pantelides

7 works Add another?

Physics of SiO2 and Its Interfaces: Proceedings of the International Topical Conference on the Physics of SiO2 and Its Interfaces Held at the IBM Thomas J. Waston Research Center, Yorktown Heights, New York, March 22-24 1978

Create a new list

Molecular Electronics: Symposium Held November 29-December 2, 1999, Boston, Massachusetts, U.S.A. (Materials Research Society Symposia Proceedings, V. 582.)

Physics of MOS Insulators: Proceedings of the International Topical Conference on the Physics of MOS Insulators Held at the Jane S. Mckimmon Conference Center, North Carolina State University, Raleigh, North Carolina, June 18-20 1980

Deep Centers in Semiconductors: A State-of-the-Art Approach

Preview Book

Computer-based microscopic description of the structure and properties of materials: symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A.

Deep centers in semiconductors: a state of the art approach

SiO2 and its interfaces: symposium held November 30-December 5, 1987, Boston, Massachusetts, U.S.A.

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